SI9956DY |
RFQ for SI9956DY |
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| Product | Manufacturers | Pack | D/C |
| SI9956DY | - | SOP8 | 00+ |

Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability: Si9956DY in SOT96-1 (SO8).
Typical Application |
Features |
| · DC to DC convertors· DC motor control·Lithium-ion battery applications·Notebook PC·Portable equipment applications. | ·Low on-state resistance·Fast switching·TrenchMOS™ technology. |
|
Symbol |
Parameter | Conditions |
Typ |
Max |
Unit |
|
VDS |
drain-source voltage (DC) | Tj = 25 to 150 |
- |
20 |
V |
|
ID |
drain current (DC) | Tamb = 25 ; pulsed; tp 10 s |
- |
3.5 |
A |
|
Ptot |
total power dissipation | Tamb = 25 ; pulsed; tp 10 s |
- |
2 |
W |
|
Tj |
junction temperature |
- |
150 |
||
|
RDSon |
drain-source on-state resistance | VGS = 10 V; ID = 2.2 A |
55 |
100 |
m |
| VGS = 4.5 V; ID = 1 A |
70 |
200 |
m |